InGaP solar cell on Ge-on-Si virtual substrate for novel solar power conversion
نویسندگان
چکیده
منابع مشابه
Comparison between the Efficiency of Heterojunction Thin Film InGaP\GaAs\Ge and InGaP\GaAs Solar Cell
Abstract—This paper presents the design parameters for a thin film 3J InGaP/GaAs/Ge solar cell with a simulated maximum efficiency of 32.11% using Tcad Silvaco. Design parameters include the doping concentration, molar fraction, layers’ thickness and tunnel junction characteristics. An initial dual junction InGaP/GaAs model of a previous published heterojunction cell was simulated in Tcad Silva...
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Spatially-resolved electroluminescence (EL) images in the triple-junction InGaP/InGaAs/Ge solar cell have been investigated to demonstrate the subcell coupling effect. Upon irradiating the infrared light with an energy below bandgap of the active layer in the top subcell, but above that in the middle subcell, the EL of the top subcell quenches. By analysis of EL intensity as a function of irrad...
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iii ACKNOWLEDGEMENTS I wish to thank Dr. Komerath, my research advisor. It has been a true honor, to work with him in his research endeavors. In addition to the great opportunity he has given me, he has always listened to my ideas, and given me his confidence, respect, encouragement, and support. I am forever indebted. I would like to thank my mother and father for everything. I would like than...
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Research on automatic tracking solar concentrator photovoltaic systems has gained increasing focus in developing the solar PV technology. A paraboloidal concentrator with secondary optic is developed for a three-junction GaInP/GalnAs/Ge solar cell. The concentration ratio of this system is 200 and the photovoltaic cell is cooled by heat pipe. A detailed analysis on the temperature coefficient i...
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ژورنال
عنوان ژورنال: Journal of Applied Physics
سال: 2018
ISSN: 0021-8979,1089-7550
DOI: 10.1063/1.5018082